SSFP8N90 starmos t power mosfet extremely high dv/dt capability low gate charge qg results in simple drive requirement 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatability description starmos is a new generation of high voltage n?channel enhancement mode power mosfets. this new technology minimises the jfet effect, increases packing density and reduces the on-resistance. starmos also achieves faster switching speeds through optimised gate layout with planar stripe dmos technology. application switching application absolute maximum ratings parameter max. units i d @tc=25 ? c continuous drain current,v gs @10v 6.3 i d @tc=100 ? c continuous drain current,v gs @10v 3.8 i dm pulsed drain current 25 a p d @t c =25 ? c power dissipation 171 w linear derating factor 1.37 w/ ? c v gs gate-to-source voltage 30 v e as single pulse avalanche energy 170 mj i ar avalanche current 2.2 a e ar repetitive avalanche energy 8.5 mj dv/dt peak diode recovery dv/dt 4.0 v/ns t j t stg operating junction and storage temperature range C 55 to +150 soldering temperature, for 10 seconds 300(1.6mm from case) ? c mounting torque,6-32 or m3 screw 10 ibf in(1.1n m) thermal resistance parameter min. typ. max. units r jc junction-to-case 0.73 r cs case-to-sink,flat,greased surface 0.5 r ja junction-to-ambient 62.5 ? c/w pin1?gate pin2?drain pin1?source v dss = 900v i d25 = 6.3a r ds(on) = 1.9 1
SSFP8N90 starmos t power mosfet electrical characteristics @t j =25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions v (br)dss drain-to-source breakdown voltage 900 v v gs =0v,i d = 250 a v (br)dss / t j breakdown voltage temp.coefficient 0.95 v/ ? c reference to 25 ? c,i d =250 a r ds(on) static drain-to-source on-resistance 1.6 1.9 v gs =10v,i d =3.15a v gs(th) gate threshold voltage 3.0 5.0 v v ds =v gs ,i d =250 a g fs forward transconductance 5.5 s v ds =50v,i d =3.15a 10 v ds =900v,v gs =0v i dss drain-to-source leakage current 100 a v ds =720v,v gs =0v,t j =125 ? c gate-to-source forward leakage 100 v gs =30v i gss gate-to-source reverse leakage -100 na v gs =-30v q g total gate charge 35 45 q gs gate-to-source charge 10 q gd gate-to-drain("miller") charge 14 nc i d =8a v ds =720v v gs =10v t d(on) turn-on delay time 40 90 t r rise time 110 230 t d(off) turn-off delay time 70 150 t f fall time 70 150 ns v dd =450v i d =8a r g =25 ? l d internal drain inductance 4.5 l s internal source inductance 7.5 nh between lead, 6mm(0.25in.) from package and center of die contact c iss input capacitance 1600 2080 c oss output capacitance 130 170 c rss reverse transfer capacitance 12 15 pf v gs =0v v ds =25v f =1.0mh z source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) 6.3 i sm pulsed source current . (body diode) 25 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.4 v t j =25 ? c,i s =6.3a,v gs =0v t rr reverse recovery time 5300 ns q rr reverse recovery charge 5.8 nc t j =25 ? c,i s =8a di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + l d ) notes: repetitive rating;pulse width limited by i sd 6.3a,di/dt 200a/ s,v dd v (br)dss , max.junction temperature(see figure 11) tj 25 ? c l = 40mh, ias = 6.3a, vdd = 50v, pulse width 300 s; duty cycle 2% rg = 25 ? , starting tj = 25c 2
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